High-temperature microhardness of SiGe epitaxial layers grown on Ge and Si substrates

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2002-12, Vol.14 (48), p.12997-13001
Main Authors: Mezhennyi, M V, Mil’vidskii, M G, Yugova, T G
Format: Article
Language:English
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ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/14/48/343