The Auger process of luminescence quenching in Si/Si:Er multinanolayers

Energy transfer to free carriers in an Auger process is well known to hamper emission of rare-earth dopants in semiconductors. In particular, this process limits the excitation mechanism and is partly responsible for the thermal quenching of the ~1.5 mum photoluminescence from Er3+ ions embedded in...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2005-06, Vol.17 (22), p.S2191-S2195
Main Authors: Vinh, N Q, Minissale, S, Andreev, B A, Gregorkiewicz, T
Format: Article
Language:English
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Summary:Energy transfer to free carriers in an Auger process is well known to hamper emission of rare-earth dopants in semiconductors. In particular, this process limits the excitation mechanism and is partly responsible for the thermal quenching of the ~1.5 mum photoluminescence from Er3+ ions embedded in the crystalline silicon matrix. In this contribution, we investigate the excitation cross section and the free-carrier Auger process in Er-doped silicon multinanolayer structures. This novel Si-based material has recently been shown to exhibit very interesting properties as regards photonic applications.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/17/22/006