Investigation of interface electronic structure of annealed Ti/Ni multilayers

The present paper deals with a systemic investigation of the interface electronic structure of as-deposited as well as annealed Ti/Ni multilayer (ML) samples up to 400 deg C using core level and valence band (VB) photoemission techniques. For this purpose [Ti(50 A)/Ni(50 A)] X 10 ML samples have bee...

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Bibliographic Details
Published in:Journal of physics. Condensed matter 2005-12, Vol.17 (48), p.7465-7488
Main Authors: Bhatt, Pramod, Chaudhari, S M
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Thin films and multilayers
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Summary:The present paper deals with a systemic investigation of the interface electronic structure of as-deposited as well as annealed Ti/Ni multilayer (ML) samples up to 400 deg C using core level and valence band (VB) photoemission techniques. For this purpose [Ti(50 A)/Ni(50 A)] X 10 ML samples have been prepared by employing an electron beam evaporation technique under ultrahigh vacuum conditions.
ISSN:0953-8984
1361-648X
DOI:10.1088/0953-8984/17/48/002