Detection of single photons using a field effect transistor with a layer of quantum dots

Demonstrates single photon detection with a GaAs/AlGaAs modulation-doped field effect transistor. High sensitivity of the transistor to light is obtained by incorporating in its structure a layer of self-organized InAs quantum dots in close proximity to the conducting channel but separated by a thin...

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Bibliographic Details
Published in:Measurement science & technology 2002-11, Vol.13 (11), p.1721-1726
Main Authors: Kardynal, B E, Shields, A J, O’Sullivan, M P, Beattie, N S, Farrer, I, Ritchie, D A, Cooper, K
Format: Article
Language:English
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Summary:Demonstrates single photon detection with a GaAs/AlGaAs modulation-doped field effect transistor. High sensitivity of the transistor to light is obtained by incorporating in its structure a layer of self-organized InAs quantum dots in close proximity to the conducting channel but separated by a thin AlGaAs barrier. Shows that capture of a single photoexcited carrier by a quantum dot results in a sizeable change in the source-drain current of the transistor allowing the detection of a single photon.
ISSN:0957-0233
1361-6501
DOI:10.1088/0957-0233/13/11/308