Measurement of the dopant concentration in a semiconductor using the Seebeck effect

This paper describes a method for measuring the dopant concentration in a semiconductor using the Seebeck effect at a given point of a sample using a transient thermal gradient. The system was tested with high-purity metallic samples and several silicon samples with different concentrations of boron...

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Bibliographic Details
Published in:Measurement science & technology 2013-05, Vol.24 (5), p.55601-1-6
Main Authors: Pó, J M, Brito, M C, Alves, J Maia, Silva, J A, Serra, J M, Vallêra, A M
Format: Article
Language:English
Subjects:
Boron
Concentration gradient
dopant concentration
Dopants
Electrical resistivity
Seebeck effect
semiconductor
Semiconductors
Silicon
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Summary:This paper describes a method for measuring the dopant concentration in a semiconductor using the Seebeck effect at a given point of a sample using a transient thermal gradient. The system was tested with high-purity metallic samples and several silicon samples with different concentrations of boron. The dopant concentrations of these samples obtained via the Seebeck coefficient were compared with those estimated from electric resistivity measurements using the standard four- point method. The results show that the method can be used for the local measurement of the doping level.
ISSN:0957-0233
1361-6501
DOI:10.1088/0957-0233/24/5/055601