Towards registered single quantum dot photonic devices

We have registered the position and wavelength of a single InGaAs quantum dot using an innovative cryogenic laser lithography technique. This approach provides accurate marking of the location of self-organized dots and is particularly important for realizing any solid-state cavity quantum electrody...

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Bibliographic Details
Published in:Nanotechnology 2008-11, Vol.19 (45), p.455307-455307
Main Authors: Lee, K H, Brossard, F S F, Hadjipanayi, M, Xu, X, Waldermann, F, Green, A M, Sharp, D N, Turberfield, A J, Williams, D A, Taylor, R A
Format: Article
Language:English
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Summary:We have registered the position and wavelength of a single InGaAs quantum dot using an innovative cryogenic laser lithography technique. This approach provides accurate marking of the location of self-organized dots and is particularly important for realizing any solid-state cavity quantum electrodynamics scheme where the overlap of the spectral and spatial characteristics of an emitter and a cavity is essential. We demonstrate progress in two key areas towards efficient single quantum dot photonic device implementation. Firstly, we show the registration and reacquisition of a single quantum dot with 50 and 150 nm accuracy, respectively. Secondly, we present data on the successful fabrication of a photonic crystal L3 cavity following the registration process.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/19/45/455307