Effective growth of boron nitride nanotubes by thermal chemical vapor deposition

Effective growth of multiwalled boron nitride nanotubes (BNNTs) has been obtained by thermal chemical vapor deposition (CVD). This is achieved by a growth vapor trapping approach as guided by the theory of nucleation. Our results enable the growth of BNNTs in a conventional horizontal tube furnace w...

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Bibliographic Details
Published in:Nanotechnology 2008-11, Vol.19 (45), p.455605-455605
Main Authors: Lee, Chee Huei, Wang, Jiesheng, Kayatsha, Vijaya K, Huang, Jian Y, Yap, Yoke Khin
Format: Article
Language:English
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Summary:Effective growth of multiwalled boron nitride nanotubes (BNNTs) has been obtained by thermal chemical vapor deposition (CVD). This is achieved by a growth vapor trapping approach as guided by the theory of nucleation. Our results enable the growth of BNNTs in a conventional horizontal tube furnace within an hour at 1200 °C. We found that these BNNTs have an absorption band edge of 5.9 eV, approaching that of single h-BN crystals, which are promising for future nanoscale deep-UV light emitting devices.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/19/45/455605