Spotting 2D atomic layers on aluminum nitride thin films

Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants...

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Bibliographic Details
Published in:Nanotechnology 2015-10, Vol.26 (42), p.425202-425202
Main Authors: Chandrasekar, Hareesh, Bharadwaj B, Krishna, Vaidyuala, Kranthi Kumar, Suran, Swathi, Bhat, Navakanta, Varma, Manoj, Srinivasan Raghavan
Format: Article
Language:English
Subjects:
2D materials
Aluminum nitride
Devices
Graphene
Mathematical analysis
Molybdenum disulfide
nitrides
optical contrast
reflectance
Silicon dioxide
Silicon substrates
substrates
Thin films
Two dimensional
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Summary:Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/26/42/425202