Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes

The impact of quantum barriers (QBs) and electron-blocking layers (EBL) on the output performance of deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated systematically. Specific LED structures with strain-compensated and p-staircase-interlayer configurations are proposed and explored...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2018-02, Vol.51 (7), p.75106
Main Authors: Chang, Jih-Yuan, Huang, Man-Fang, Chen, Fang-Ming, Liou, Bo-Ting, Shih, Ya-Hsuan, Kuo, Yen-Kuang
Format: Article
Language:English
Subjects:
AlGaN
carrier confinement
light-emitting diodes
polarization effect
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Summary:The impact of quantum barriers (QBs) and electron-blocking layers (EBL) on the output performance of deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated systematically. Specific LED structures with strain-compensated and p-staircase-interlayer configurations are proposed and explored in detail. Simulation results show that Al compositions of both QBs and EBL are critical to the capability of carrier confinement of the active region. A DUV LED structure with excellent output performance can be obtained provided that the QBs and EBL are properly designed via band engineering. Furthermore, LED structures without EBL are also investigated. If the DUV LED has well-designed deeper quantum wells, an excellent output performance can be maintained, even when the LED structure is without EBL.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aaa440