Influence of annealing environment on the ALD-Al 2 O 3 /4H-SiC interface studied through XPS

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2018-03, Vol.51 (10), p.105111
Main Authors: Usman, Muhammad, Arshad, Muhammad, Suvanam, Sethu Saveda, Hallén, Anders
Format: Article
Language:English
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ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aaa9a1