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Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation

In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion irradiation. According to the micro-magnetic parameters, e.g. resonance fields and anisotropy constants deduced from ferromagnetic resonance measurements, a rotation of the magnetic easy axis from out-of-plane...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2018-04, Vol.51 (14), p.145001
Main Authors: Yuan, Ye, Amarouche, Teyri, Xu, Chi, Rushforth, Andrew, Böttger, Roman, Edmonds, Kevin, Campion, Richard, Gallagher, Bryan, Helm, Manfred, von Bardeleben, Hans Jürgen, Zhou, Shengqiang
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Language:English
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Summary:In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion irradiation. According to the micro-magnetic parameters, e.g. resonance fields and anisotropy constants deduced from ferromagnetic resonance measurements, a rotation of the magnetic easy axis from out-of-plane [0 0 1] to in-plane [1 0 0] direction is achieved. From the application point of view, our work presents a novel avenue in modifying the uniaxial magnetic anisotropy in GaMnAsP with the possibility of lateral patterning by using lithography or focused ion beam.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aab1db