Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation

In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion irradiation. According to the micro-magnetic parameters, e.g. resonance fields and anisotropy constants deduced from ferromagnetic resonance measurements, a rotation of the magnetic easy axis from out-of-plane...

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Published in:Journal of physics. D, Applied physics Applied physics, 2018-04, Vol.51 (14), p.145001
Main Authors: Yuan, Ye, Amarouche, Teyri, Xu, Chi, Rushforth, Andrew, Böttger, Roman, Edmonds, Kevin, Campion, Richard, Gallagher, Bryan, Helm, Manfred, von Bardeleben, Hans Jürgen, Zhou, Shengqiang
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Language:English
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GaMnAsP
ion irradiation
uniaxial magnetic anisotropy
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cited_by cdi_FETCH-LOGICAL-c353t-a3d0cfc3c908a283a51a84ee3e02021572dea327f1bd75117641d00c8369f7653
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container_issue 14
container_start_page 145001
container_title Journal of physics. D, Applied physics
container_volume 51
creator Yuan, Ye
Amarouche, Teyri
Xu, Chi
Rushforth, Andrew
Böttger, Roman
Edmonds, Kevin
Campion, Richard
Gallagher, Bryan
Helm, Manfred
von Bardeleben, Hans Jürgen
Zhou, Shengqiang
description In the present work, the uniaxial magnetic anisotropy of GaMnAsP is modified by helium ion irradiation. According to the micro-magnetic parameters, e.g. resonance fields and anisotropy constants deduced from ferromagnetic resonance measurements, a rotation of the magnetic easy axis from out-of-plane [0 0 1] to in-plane [1 0 0] direction is achieved. From the application point of view, our work presents a novel avenue in modifying the uniaxial magnetic anisotropy in GaMnAsP with the possibility of lateral patterning by using lithography or focused ion beam.
doi_str_mv 10.1088/1361-6463/aab1db
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subjects GaMnAsP
ion irradiation
uniaxial magnetic anisotropy
title Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation
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