Terahertz excitation spectra of GaAsBi alloys

Terahertz excitation spectroscopy was used for the determination of energy separation between the main (Γ) and subsidiary (L and X) conduction band valleys of GaAs1−xBix. The samples used in this study were 1 µm-1.5 µm thick bismide layers grown by Molecular Beam Epitaxy on GaAs substrates. They con...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2018-11, Vol.51 (47), p.474001
Main Authors: Pa ebutas, V, Stanionyt, S, Arlauskas, A, Norkus, R, Butkut, R, Gei utis, A, echavi ius, B, Krotkus, A
Format: Article
Language:English
Subjects:
band offset
GaAsBi
HR-XRD
MBE
THz excitation spectroscopy
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Terahertz excitation spectroscopy was used for the determination of energy separation between the main (Γ) and subsidiary (L and X) conduction band valleys of GaAs1−xBix. The samples used in this study were 1 µm-1.5 µm thick bismide layers grown by Molecular Beam Epitaxy on GaAs substrates. They contained up to 8% of bismuth as determined by high resolution x-ray diffraction (HR-XRD) and reciprocal space mapping (RSM), taking into account the layer relaxation. It was found that both subsidiary conduction band valleys at L and X points of the Brillouin zone move away from the conduction band minimum at rates of 18 meV/%Bi and 25 meV/%Bi, respectively, with increasing Bi content in the alloy.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aadb11