Silicon acoustoelectronics with thin film lithium niobate

We report on the acoustoelectric (AE) interaction in heterogeneously integrated thin-film lithium niobate on standard resistivity and high resistivity silicon substrates (LNOSs). The monolithic LNOS platform delivers acoustic waves with a large electromechanical coupling coefficient (K2) and draws o...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2019-01, Vol.52 (5), p.5
Main Authors: Bhaskar, Umesh Kumar, Bhave, Sunil Ashok, Weinstein, Dana
Format: Article
Language:English
Subjects:
acoustic wave
acoustoelectric
piezoelectric
semiconductor
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report on the acoustoelectric (AE) interaction in heterogeneously integrated thin-film lithium niobate on standard resistivity and high resistivity silicon substrates (LNOSs). The monolithic LNOS platform delivers acoustic waves with a large electromechanical coupling coefficient (K2) and draws on standard metal-oxide semiconductor field effect techniques to maximise AE interaction by impedance matching the acoustic wave with the semiconductor carriers. Preliminary results are obtained on AE attenuation (4 dB cm−1) and AE gain (6 dB cm−1). With further improvement of the LN/Si interface, the LNOS platform can be expected to give rise to an era of non-reciprocal silicon acoustoelectronics.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aaee59