Flexibility of Ga-containing Type-II superlattice for long-wavelength infrared detection

In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing SL) is explored and investigated from the growth to the device performance. First, several samples with different SL period composition and thickness are grown by molecular beam epitaxy. Nearly strain-com...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2019-11, Vol.52 (47), p.475102
Main Authors: Delmas, M, Kwan, D C M, Debnath, M C, Liang, B L, Huffaker, D L
Format: Article
Language:English
Subjects:
dark-current
electronic band structure
InAs/GaSb superlattice
long-wavelength infrared
molecular beam epitaxy
photodiodes
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, the flexibility of long-wavelength Type-II InAs/GaSb superlattice (Ga-containing SL) is explored and investigated from the growth to the device performance. First, several samples with different SL period composition and thickness are grown by molecular beam epitaxy. Nearly strain-compensated SLs on GaSb exhibiting an energy band gap between 105 to 169 meV at 77 K are obtained. Second, from electronic band structure calculation, material parameters are extracted and compared for the different grown SLs. Finally, two p-i-n device structures with different SL periods are grown and their electrical performance compared. Our investigation shows that an alternative SL design could potentially be used to improve the device performance of diffusion-limited devices for long-wavelength infrared detection.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ab3b6a