The influence of interface strain on the magnetization switching process in FeSi/(011)PMN-0.3PT heterostructures

• Published in: Journal of physics. D, Applied physics Applied physics, 2020-06, Vol.53 (25), p.255003
• Main Authors: Guo, X B, Tang, X G, Liu, Q X, Jiang, Y P, Zuo, Y L, Xi, L
• Format: Article
• Language: English
• Subjects: electric field; interface strain; magnetization switching process; reversible and non-volatile
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/1361-6463/ab7aca

The magnetization switching process of Fe80Si20/(PbMg1/3Nb2/3O3)0.7-(PbTiO3)0.3 (FeSi/PMN-0.3PT) heterostructures under electric-field-induced interface strain effects was investigated using the magneto-optical Kerr effect. In the as-deposited FeSi films with low four-fold magnetic anisotropy, the one-jump and two-jump loops corresponding to the 180° and 90° domain walls were observed and could be regularly tuned by applying saturated and converse electric fields in these crystalline regions. After 300 °C annealing treatment, the heterostructures presented enhanced crystallinity and interface strain effect. By applying an impulse electric field, we achieved a reliable and non-volatile two-jump and three-jump magnetization switching transition. These regulation results further confirm the magnetic anisotropy transition and magnetic energy superposition relationship in FeSi/PMN-0.3PT. The controllable magnetization switching process is significant for understanding the mechanism of magnetic anisotropy competition and for designing the relevant magnetoelectric devices.