DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures

• Published in: Journal of physics. D, Applied physics Applied physics, 2022-10, Vol.55 (43), p.434003
• Main Authors: Zeng, Bolun, Zhang, Haochen, Luo, Chao, Xiang, Zikun, Zhang, Yuanke, Wen, Mingjie, Xue, Qiwen, Hu, Sirui, Sun, Yue, Yang, Lei, Sun, Haiding, Guo, Guoping
• Format: Article
• Language: English
• Subjects: cryogenic applications; GaN-based HEMT; low-frequency noise; power spectral density
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/1361-6463/ac89fc

In this work, the device characteristics of GaN-based high-electron-mobility transistors (HEMTs) were systematically investigated by the direct current (DC) and low-frequency noise (LFN) measurements within the temperature ranging from 300 K to 4.2 K. The temperature-dependent behavior of the on- and off-state electrical properties was statistically analyzed, highlighting an overall improved device performance under cryogenic temperatures. In addition, the LFN of the device exhibited an evident behavior of 1/ f noise from 10 Hz to 10 kHz in the measured temperature range and can be well described by the carrier number fluctuations with correlated mobility fluctuations (CNF/CMF) model down to 4.2 K. Based on this model, we further extracted and discussed the defect-related behavior in the devices under low-temperature environments. These experimental results provide insights into the device characteristics of GaN-based HEMTs under cryogenic environments, motivating further studies into the GaN-based cryo-devices and systems.