Properties and modification of native oxides of InP(100)

Properties of oxidized InP surfaces, which are known to cause less electrical and optical losses than other III–V oxides, are relevant to develop the passivation of current and future applications of III–V crystals (e.g. lasers, detectors). We report that a proper low-temperature (LT) (

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2023-01, Vol.56 (4), p.44001
Main Authors: Ebrahimzadeh, Masoud, Vuori, Sami, Miettinen, Mikko, Lehtiö, Juha-Pekka, Granroth, Sari, Punkkinen, Marko P J, Rad, Zahra Sadat Jahanshah, Punkkinen, Risto, Kuzmin, Mikhail, Laukkanen, Pekka, Lastusaari, Mika, Kokko, Kalevi
Format: Article
Language:English
Subjects:
InP
native oxide
surface defect
ultrahigh vacuum
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Summary:Properties of oxidized InP surfaces, which are known to cause less electrical and optical losses than other III–V oxides, are relevant to develop the passivation of current and future applications of III–V crystals (e.g. lasers, detectors). We report that a proper low-temperature (LT) (
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aca259