Nanocrystalline β-Ga 2 O 3 thin film prepared by electron beam evaporation for enhanced photodetection

• Published in: Journal of physics. D, Applied physics Applied physics, 2023-09, Vol.56 (39), p.395104
• Main Authors: Meitei, Shagolsem Romeo, Devi, Leimapokpam Sophia, Singh, Naorem Khelchand
• Format: Article
• Language: English
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/1361-6463/ace201

In this study, e-beam evaporation technique was used to fabricate thin-film (TF) of β -Ga 2 O 3 on Si-substrate. The average crystallite size was determined to be roughly ∼39.8 nm. The deposition of β -Ga 2 O 3 TF appears smooth and devoid of cracks or pits, with an average film thickness of ∼375 nm. From the ultraviolet (UV)–Vis absorption, the optical bandgap value for β -Ga 2 O 3 TF was found to be about ∼4.84 eV. Our study found that the photodetector (PD) had excellent performance, characterized by an extremely low dark current of 4.02 × 10 −8 A at −1 V bias, an I L / I D ratio over nine times, and the short rise and fall times of .27 s and .059 s. The simultaneous achievement of minimal dark current and quick rise and fall times is remarkable. The β -Ga 2 O 3 TF PD’s remarkable consistency and reproducibility suggest promising practical applications for UV PDs.