Ag nanoparticle decorated β-Ga2O3 nanowires on Si substrates: advancing photodetector technology

In this study, we present the fabrication of Ag nanoparticle (NP) decorated β-Ga2O3 nanowire (NW) on a Si-substrate, with a focus on their application in photodetection. The resulting Ag NP decorated β-Ga2O3 NW exhibited a polycrystalline morphology characterized by well-aligned rows of vertically o...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2024-04, Vol.57 (17)
Main Authors: Romeo Meitei, Shagolsem, Devi, Leimapokpam Sophia, Singh, Naorem Khelchand
Format: Article
Language:English
Subjects:
Ag nanoparticle
crystalline
Ga
GLAD
nanowire
photodetector
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Summary:In this study, we present the fabrication of Ag nanoparticle (NP) decorated β-Ga2O3 nanowire (NW) on a Si-substrate, with a focus on their application in photodetection. The resulting Ag NP decorated β-Ga2O3 NW exhibited a polycrystalline morphology characterized by well-aligned rows of vertically oriented structures. The mean size of the crystallites was revealed to be approximately 15.94 nm. The fabrication of Ag NP decorated β-Ga2O3 NW displayed uniformity, with an average length of approximately ~180 nm. The UV-Vis absorption spectroscopy analysis yielded an approximate optical bandgap value of 4.74 eV. Notably, the fabricated photodetector exhibited excellent performance characteristics. This was highlighted by the minimal dark current of -3.2 nA at a bias voltage of -1 V, accompanied by an IL/ID ratio exceeding 60. Moreover, the photodetector demonstrated rapid rise and fall times of 0.023 s and 0.021 s, respectively. The remarkable aspect lies in the simultaneous attainment of minimum dark current and swift response times. The Ag NP-decorated β-Ga2O3 NW photodetector exhibited consistent and reproducible behavior, suggesting its potential for realistic use in ultraviolet photodetection.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ad2295