Optical and electrical studies on the TS defect in 4H-SiC

When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers occurs among which the TS center is a prominent example. Here, we present low-temperature photoluminescence analyses on the single defect level. They reveal that the three occurring spectral signatures T...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2025-01, Vol.58 (1), p.15105
Main Authors: Lehmeyer, Johannes A F, Fuchs, Alexander D, Li, Zhengming, Bornträger, Titus, Candolfi, Fabio, Schober, Maximilian, Fischer, Marcus, Hartmann, Martin, Neu, Elke, Bockstedte, Michel, Krieger, Michael, Weber, Heiko B
Format: Article
Language:English
Subjects:
4H-SiC
color center
defect
DLTS
photoluminescence
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Summary:When annealing a 4H silicon carbide (SiC) crystal, a sequence of optically active defect centers occurs among which the TS center is a prominent example. Here, we present low-temperature photoluminescence analyses on the single defect level. They reveal that the three occurring spectral signatures TS1, TS2 and TS3 originate from one single defect. Their polarization dependences expose three different crystallographic orientations in the basal plane, which relate to the projections of the nearest neighbor directions. Accordingly, we find a three-fold level-splitting in ensemble studies, when applying mechanical strain. This dependency is quantitatively calibrated. A complementary electrical measurement, deep level transient spectroscopy, reveals a charge transition level of the TS defect at 0.6 eV above the valence band. For a future identification, this accurate characterization of its optical and electronic properties along with their response to mechanical strain is a milestone.
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ad7bc5