Precise measurement of the 7 Be electron capture decay half-life in Silicon Carbide

In this work we present to our knowledge the most precise measurement of the 7 Be electron capture decay half-life. A SiC sample with 8.62·10 9 7 Be atoms was measured for 83.5 day on an ultra-low background high purity Ge detector located deep underground in the Laboratori Nazionali del Gran Sasso,...

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Bibliographic Details
Published in:Journal of physics. G, Nuclear and particle physics Nuclear and particle physics, 2024-11
Main Authors: Santonastaso, Claudio, Casali, Nicola, Di Benedetto, Luigi, Boldrini, Virginia, Buompane, Raffaele, Canino, M, Carrano, Vincenzo, Formicola, Alba, Gialanella, Lucio, Laubenstein, Matthias, Neitzert, Henrich-Christoph, Pieruccini, Marco, Porzio, Giuseppe, Rubino, Alfredo
Format: Article
Language:English
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Summary:In this work we present to our knowledge the most precise measurement of the 7 Be electron capture decay half-life. A SiC sample with 8.62·10 9 7 Be atoms was measured for 83.5 day on an ultra-low background high purity Ge detector located deep underground in the Laboratori Nazionali del Gran Sasso, Italy. The result obtained for the decay half-life is T 1/2 = 53.284 ± 0.016 days, which corresponds to an uncertainty of 0.3 ‰. Thanks to the high sensitivity achieved, this measurement is paving the way to further investigations on this process aiming to understand how environmental conditions may affect the decay half-life.
ISSN:0954-3899
1361-6471
DOI:10.1088/1361-6471/ad98ac