Precise measurement of the 7 Be electron capture decay half-life in Silicon Carbide

In this work we present to our knowledge the most precise measurement of the 7 Be electron capture decay half-life. A SiC sample with 8.62·10 9 7 Be atoms was measured for 83.5 day on an ultra-low background high purity Ge detector located deep underground in the Laboratori Nazionali del Gran Sasso,...

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Published in:Journal of physics. G, Nuclear and particle physics Nuclear and particle physics, 2024-11
Main Authors: Santonastaso, Claudio, Casali, Nicola, Di Benedetto, Luigi, Boldrini, Virginia, Buompane, Raffaele, Canino, M, Carrano, Vincenzo, Formicola, Alba, Gialanella, Lucio, Laubenstein, Matthias, Neitzert, Henrich-Christoph, Pieruccini, Marco, Porzio, Giuseppe, Rubino, Alfredo
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container_title Journal of physics. G, Nuclear and particle physics
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creator Santonastaso, Claudio
Casali, Nicola
Di Benedetto, Luigi
Boldrini, Virginia
Buompane, Raffaele
Canino, M
Carrano, Vincenzo
Formicola, Alba
Gialanella, Lucio
Laubenstein, Matthias
Neitzert, Henrich-Christoph
Pieruccini, Marco
Porzio, Giuseppe
Rubino, Alfredo
description In this work we present to our knowledge the most precise measurement of the 7 Be electron capture decay half-life. A SiC sample with 8.62·10 9 7 Be atoms was measured for 83.5 day on an ultra-low background high purity Ge detector located deep underground in the Laboratori Nazionali del Gran Sasso, Italy. The result obtained for the decay half-life is T 1/2 = 53.284 ± 0.016 days, which corresponds to an uncertainty of 0.3 ‰. Thanks to the high sensitivity achieved, this measurement is paving the way to further investigations on this process aiming to understand how environmental conditions may affect the decay half-life.
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title Precise measurement of the 7 Be electron capture decay half-life in Silicon Carbide
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