Attachable and flexible aluminum oxide resistive non-volatile memory arrays fabricated on tape as the substrate

• Published in: Nanotechnology 2017-03, Vol.28 (13), p.135201-135201
• Main Authors: Lee, Woocheol, Jang, Jingon, Song, Younggul, Cho, Kyungjune, Yoo, Daekyoung, Kim, Youngrok, Chung, Seungjun, Lee, Takhee
• Format: Article
• Language: English
• Subjects: attachability; flexibility; negative resistance; non-volatility; resistive memory
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/1361-6528/aa5f0d

We fabricated 8 × 8 arrays of non-volatile resistive memory devices on commercially available Scotch Magic™ tape as a flexible substrate. The memory devices consist of double active layers of Al2O3 with a structure of Au/Al2O3/Au/Al2O3/Al (50 nm/20 nm/20 nm/20 nm/50 nm) on attachable tape substrates. Because the memory devices were fabricated using only dry and low temperature processes, the tape substrate did not suffer from any physical or chemical damage during the fabrication. The fabricated memory devices were turned to the low resistance state at ∼3.5 V and turned to the high resistance state at ∼10 V with a negative differential resistance region after ∼5 V, showing typical unipolar non-volatile resistive memory behavior. The memory devices on the tape substrates exhibited reasonable electrical performances including a high ON/OFF ratio of 104, endurance over 200 cycles of reading/writing processes, and retention times of over 104 s in both the flat and bent configurations.