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Highly uniform and symmetric epitaxial InAs quantum dots embedded inside Indium droplet etched nanoholes

III−V semiconductor quantum dots (QDs) obtained by local droplet etching technology provide a material platform for generation of non-classic light. However, using this technique to fabricate single emitters for a broad spectral range remains a significant challenge. Herein, we successfully extend t...

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Published in:Nanotechnology 2019-11, Vol.30 (48), p.485001-485001
Main Authors: Yu, Ying, Zhong, Hancheng, Yang, Jiawei, Liu, Lin, Liu, Jin, Yu, Siyuan
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Language:English
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container_end_page 485001
container_issue 48
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container_title Nanotechnology
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creator Yu, Ying
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description III−V semiconductor quantum dots (QDs) obtained by local droplet etching technology provide a material platform for generation of non-classic light. However, using this technique to fabricate single emitters for a broad spectral range remains a significant challenge. Herein, we successfully extend the QD emission wavelength to 850-880 nm via highly uniform and symmetric InAs QDs located inside indium-droplet-etching nanoholes. The evolution of InGaAs nanostructures by high temperature indium droplet epitaxy on GaAs substrate is revealed. By carefully designing the appropriate growth conditions, symmetric QDs with the a small fine structure splitting of only ∼4.4 0.8 eV are demonstrated. Averaging over the emission energies of 32 QDs, an ensemble broadening of 12 meV is observed. Individual QDs are shown to emit nonclassically with clear evidence of photon antibunching. These highly uniform and symmetric nanostructures represent a very promising novel strategy for quantum information applications.
doi_str_mv 10.1088/1361-6528/ab3efb
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subjects droplet etched nanoholes
entangled photon pairs
molecular beam epitaxy
symmetric quantum dots
title Highly uniform and symmetric epitaxial InAs quantum dots embedded inside Indium droplet etched nanoholes
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