Loading…

Sodium-based nano-ionic synaptic transistor with improved retention characteristics

We propose an all-solid-state Na ion-based synaptic transistor (NST) to overcome the low retention problem of the Li ion-based synaptic transistor (LST). Through our analysis, it was found that the retention instability in an ionic synaptic transistor originated from its high ionic diffusivity. As c...

Full description

Saved in:
Bibliographic Details
Published in:Nanotechnology 2020-11, Vol.31 (45), p.455204-455204
Main Authors: Lee, Kyumin, Lee, Jongwon, Nikam, Revannath Dnyandeo, Heo, Seongjae, Hwang, Hyunsang
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c347t-c95c9a060fad5194bc866aac9e85eafbb75706c839c52ba00a9c3a2b2168caf13
cites cdi_FETCH-LOGICAL-c347t-c95c9a060fad5194bc866aac9e85eafbb75706c839c52ba00a9c3a2b2168caf13
container_end_page 455204
container_issue 45
container_start_page 455204
container_title Nanotechnology
container_volume 31
creator Lee, Kyumin
Lee, Jongwon
Nikam, Revannath Dnyandeo
Heo, Seongjae
Hwang, Hyunsang
description We propose an all-solid-state Na ion-based synaptic transistor (NST) to overcome the low retention problem of the Li ion-based synaptic transistor (LST). Through our analysis, it was found that the retention instability in an ionic synaptic transistor originated from its high ionic diffusivity. As confirmed by cyclic voltammetry analysis, Na ions have a lower ionic diffusivity than Li ions in the WOx layer. The state retention of NST was found to be improved to 20 times that of LST. Furthermore, near-ideal synaptic behaviors, such as linear weight update and linear I-V characteristics, were also obtained by material engineering.
doi_str_mv 10.1088/1361-6528/abaa0e
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1088_1361_6528_abaa0e</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2428554037</sourcerecordid><originalsourceid>FETCH-LOGICAL-c347t-c95c9a060fad5194bc866aac9e85eafbb75706c839c52ba00a9c3a2b2168caf13</originalsourceid><addsrcrecordid>eNp1kEtLxDAQgIMouD7uHntUsG6SJm16lMUXLHhYPYdpmrJZtklNUmX_vSkVTwoDMwzfDDMfQlcE3xEsxJIUJclLTsUSGgCsj9Dit3WMFrjmVc6YYKfoLIQdxoQIShZos3GtGfu8gaDbzIJ1uXHWqCwcLAwxFdGDDSZE57MvE7eZ6QfvPhPsddQ2JjpTW_CgovYJMypcoJMO9kFf_uRz9P748LZ6ztevTy-r-3WuClbFXNVc1YBL3EHLSc0aJcoSQNVacA1d01S8wqUSRa04bQBjqFUBtKGkFAo6Upyj63lvOuhj1CHK3gSl93uw2o1BUkYF5wwXVULxjCrvQvC6k4M3PfiDJFhO_uQkS06y5OwvjdzMI8YNcudGb9MvcjIkCyIZT8EpZnJou8Te_sH-u_ob6XaCXg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2428554037</pqid></control><display><type>article</type><title>Sodium-based nano-ionic synaptic transistor with improved retention characteristics</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Lee, Kyumin ; Lee, Jongwon ; Nikam, Revannath Dnyandeo ; Heo, Seongjae ; Hwang, Hyunsang</creator><creatorcontrib>Lee, Kyumin ; Lee, Jongwon ; Nikam, Revannath Dnyandeo ; Heo, Seongjae ; Hwang, Hyunsang</creatorcontrib><description>We propose an all-solid-state Na ion-based synaptic transistor (NST) to overcome the low retention problem of the Li ion-based synaptic transistor (LST). Through our analysis, it was found that the retention instability in an ionic synaptic transistor originated from its high ionic diffusivity. As confirmed by cyclic voltammetry analysis, Na ions have a lower ionic diffusivity than Li ions in the WOx layer. The state retention of NST was found to be improved to 20 times that of LST. Furthermore, near-ideal synaptic behaviors, such as linear weight update and linear I-V characteristics, were also obtained by material engineering.</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/1361-6528/abaa0e</identifier><identifier>CODEN: NNOTER</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>ionic diffusivity ; Na ion-based synaptic transistor ; neuromorphic device ; state retention</subject><ispartof>Nanotechnology, 2020-11, Vol.31 (45), p.455204-455204</ispartof><rights>2020 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c347t-c95c9a060fad5194bc866aac9e85eafbb75706c839c52ba00a9c3a2b2168caf13</citedby><cites>FETCH-LOGICAL-c347t-c95c9a060fad5194bc866aac9e85eafbb75706c839c52ba00a9c3a2b2168caf13</cites><orcidid>0000-0003-0836-5250 ; 0000-0002-9737-5858 ; 0000-0002-6277-8411</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Lee, Kyumin</creatorcontrib><creatorcontrib>Lee, Jongwon</creatorcontrib><creatorcontrib>Nikam, Revannath Dnyandeo</creatorcontrib><creatorcontrib>Heo, Seongjae</creatorcontrib><creatorcontrib>Hwang, Hyunsang</creatorcontrib><title>Sodium-based nano-ionic synaptic transistor with improved retention characteristics</title><title>Nanotechnology</title><addtitle>Nano</addtitle><addtitle>Nanotechnology</addtitle><description>We propose an all-solid-state Na ion-based synaptic transistor (NST) to overcome the low retention problem of the Li ion-based synaptic transistor (LST). Through our analysis, it was found that the retention instability in an ionic synaptic transistor originated from its high ionic diffusivity. As confirmed by cyclic voltammetry analysis, Na ions have a lower ionic diffusivity than Li ions in the WOx layer. The state retention of NST was found to be improved to 20 times that of LST. Furthermore, near-ideal synaptic behaviors, such as linear weight update and linear I-V characteristics, were also obtained by material engineering.</description><subject>ionic diffusivity</subject><subject>Na ion-based synaptic transistor</subject><subject>neuromorphic device</subject><subject>state retention</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kEtLxDAQgIMouD7uHntUsG6SJm16lMUXLHhYPYdpmrJZtklNUmX_vSkVTwoDMwzfDDMfQlcE3xEsxJIUJclLTsUSGgCsj9Dit3WMFrjmVc6YYKfoLIQdxoQIShZos3GtGfu8gaDbzIJ1uXHWqCwcLAwxFdGDDSZE57MvE7eZ6QfvPhPsddQ2JjpTW_CgovYJMypcoJMO9kFf_uRz9P748LZ6ztevTy-r-3WuClbFXNVc1YBL3EHLSc0aJcoSQNVacA1d01S8wqUSRa04bQBjqFUBtKGkFAo6Upyj63lvOuhj1CHK3gSl93uw2o1BUkYF5wwXVULxjCrvQvC6k4M3PfiDJFhO_uQkS06y5OwvjdzMI8YNcudGb9MvcjIkCyIZT8EpZnJou8Te_sH-u_ob6XaCXg</recordid><startdate>20201106</startdate><enddate>20201106</enddate><creator>Lee, Kyumin</creator><creator>Lee, Jongwon</creator><creator>Nikam, Revannath Dnyandeo</creator><creator>Heo, Seongjae</creator><creator>Hwang, Hyunsang</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><orcidid>https://orcid.org/0000-0003-0836-5250</orcidid><orcidid>https://orcid.org/0000-0002-9737-5858</orcidid><orcidid>https://orcid.org/0000-0002-6277-8411</orcidid></search><sort><creationdate>20201106</creationdate><title>Sodium-based nano-ionic synaptic transistor with improved retention characteristics</title><author>Lee, Kyumin ; Lee, Jongwon ; Nikam, Revannath Dnyandeo ; Heo, Seongjae ; Hwang, Hyunsang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c347t-c95c9a060fad5194bc866aac9e85eafbb75706c839c52ba00a9c3a2b2168caf13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>ionic diffusivity</topic><topic>Na ion-based synaptic transistor</topic><topic>neuromorphic device</topic><topic>state retention</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Kyumin</creatorcontrib><creatorcontrib>Lee, Jongwon</creatorcontrib><creatorcontrib>Nikam, Revannath Dnyandeo</creatorcontrib><creatorcontrib>Heo, Seongjae</creatorcontrib><creatorcontrib>Hwang, Hyunsang</creatorcontrib><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Kyumin</au><au>Lee, Jongwon</au><au>Nikam, Revannath Dnyandeo</au><au>Heo, Seongjae</au><au>Hwang, Hyunsang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sodium-based nano-ionic synaptic transistor with improved retention characteristics</atitle><jtitle>Nanotechnology</jtitle><stitle>Nano</stitle><addtitle>Nanotechnology</addtitle><date>2020-11-06</date><risdate>2020</risdate><volume>31</volume><issue>45</issue><spage>455204</spage><epage>455204</epage><pages>455204-455204</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><coden>NNOTER</coden><abstract>We propose an all-solid-state Na ion-based synaptic transistor (NST) to overcome the low retention problem of the Li ion-based synaptic transistor (LST). Through our analysis, it was found that the retention instability in an ionic synaptic transistor originated from its high ionic diffusivity. As confirmed by cyclic voltammetry analysis, Na ions have a lower ionic diffusivity than Li ions in the WOx layer. The state retention of NST was found to be improved to 20 times that of LST. Furthermore, near-ideal synaptic behaviors, such as linear weight update and linear I-V characteristics, were also obtained by material engineering.</abstract><pub>IOP Publishing</pub><doi>10.1088/1361-6528/abaa0e</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0003-0836-5250</orcidid><orcidid>https://orcid.org/0000-0002-9737-5858</orcidid><orcidid>https://orcid.org/0000-0002-6277-8411</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0957-4484
ispartof Nanotechnology, 2020-11, Vol.31 (45), p.455204-455204
issn 0957-4484
1361-6528
language eng
recordid cdi_crossref_primary_10_1088_1361_6528_abaa0e
source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects ionic diffusivity
Na ion-based synaptic transistor
neuromorphic device
state retention
title Sodium-based nano-ionic synaptic transistor with improved retention characteristics
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T00%3A53%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Sodium-based%20nano-ionic%20synaptic%20transistor%20with%20improved%20retention%20characteristics&rft.jtitle=Nanotechnology&rft.au=Lee,%20Kyumin&rft.date=2020-11-06&rft.volume=31&rft.issue=45&rft.spage=455204&rft.epage=455204&rft.pages=455204-455204&rft.issn=0957-4484&rft.eissn=1361-6528&rft.coden=NNOTER&rft_id=info:doi/10.1088/1361-6528/abaa0e&rft_dat=%3Cproquest_cross%3E2428554037%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c347t-c95c9a060fad5194bc866aac9e85eafbb75706c839c52ba00a9c3a2b2168caf13%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2428554037&rft_id=info:pmid/&rfr_iscdi=true