Field-assisted growth of one-dimensional ZnO nanostructures with high defect density

One-dimensional ZnO nanostructures have shown great potential in electronics, optoelectronics and electromechanical devices owing to their unique physical and chemical properties. Most of these nanostructures were grown by equilibrium processes where the defects density is controlled by thermodynami...

Full description

Saved in:
Bibliographic Details
Published in:Nanotechnology 2021-02, Vol.32 (9), p.95603
Main Authors: Phuah, Xin Li, Cho, Jaehun, Akriti, Dou, Letian, Rheinheimer, Wolfgang, García, R Edwin, Zhang, Xinghang, Wang, Haiyan
Format: Article
Language:English
Subjects:
defects
flash sintering
nanostructures
stacking faults
ZnO
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:One-dimensional ZnO nanostructures have shown great potential in electronics, optoelectronics and electromechanical devices owing to their unique physical and chemical properties. Most of these nanostructures were grown by equilibrium processes where the defects density is controlled by thermodynamic equilibrium. In this work, flash sintering, a non-equilibrium field-assisted processing method, has been used to synthesize ZnO nanostructures. By applying a high electric field and limiting a low current flow, ZnO nanorods grew uniformly by a vapor-liquid-solid mechanism due to the extreme temperatures achieved near the hot spot. High density basal stacking faults in the nanorods along with ultraviolet excitonic emission and a red emission under room temperature demonstrate the potential of defect engineering in nanostructures via the field-assisted growth method.
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/abcb2f