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Davydov Splitting, Resonance Effect and Phonon Dynamics in Chemical Vapor Deposition Grown Layered MoS 2
We present comprehensive temperature dependent Raman measurements for chemical vapor deposition grown horizontally aligned layered MoS in a temperature range of 4-330 K under a resonance condition. Our analysis of temperature dependent phonon frequency shift and linewidth suggests a finite role of t...
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Published in: | Nanotechnology 2021-07, Vol.32 (28), p.285705 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We present comprehensive temperature dependent Raman measurements for chemical vapor deposition grown horizontally aligned layered MoS
in a temperature range of 4-330 K under a resonance condition. Our analysis of temperature dependent phonon frequency shift and linewidth suggests a finite role of three and four phonon anharmonic effect. We observe Davydov splitting of the out-of-plane (
) and in-plane (E2g1) modes for both three layer (3L) and few layer (FL) systems. The number of Davydov splitting components are found more in FL compared to 3L MoS
, which suggests that it increases with an increasing number of layers. Further, Davydov splitting is analyzed as a function of temperature. Temperature evaluation of the Raman spectra shows that the Davydov splitting, especially for
mode, is very strong and well resolved at low temperature. We observe that
mode shows the splitting at low temperature, whileE2g1mode is split even at room temperature, which suggests a prominent role of
mode in the interlayer interaction at low temperature. Further, an almost 60-fold increase in the intensity of the phonon modes at low temperature clearly shows the temperature dependent tuning of the resonance effect. |
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ISSN: | 0957-4484 1361-6528 |
DOI: | 10.1088/1361-6528/abf37b |