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Effect of ferroelectric and interface films on the tunneling electroresistance of the Al 2 O 3 /Hf 0.5 Zr 0.5 O 2 based ferroelectric tunnel junctions

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Bibliographic Details
Published in:	Nanotechnology 2021-11, Vol.32 (48), p.485204
Main Authors:	Shekhawat, Aniruddh, Hsain, H Alex, Lee, Younghwan, Jones, Jacob L, Moghaddam, Saeed
Format:	Article
Language:	English
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
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