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Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)
The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh (>10 m ) or ultralow (
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| Published in: | Nanotechnology 2023-09, Vol.34 (37), p.375602 |
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| cites | cdi_FETCH-LOGICAL-c309t-1af572691e0d57c90f43bc8ac0704a71b98cdebf8f197f2a9ca1e9629b99d14e3 |
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| container_issue | 37 |
| container_start_page | 375602 |
| container_title | Nanotechnology |
| container_volume | 34 |
| creator | Auzelle, T Oliva, M John, P Ramsteiner, M Trampert, A Geelhaar, L Brandt, O |
| description | The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh (>10
m
) or ultralow ( |
| doi_str_mv | 10.1088/1361-6528/acdde8 |
| format | article |
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m
) or ultralow (<1
m
) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we examine the self-assembly of SiN
patches on TiN(111) substrates which are eventually acting as seeds for the growth of GaN nanowires. We first found that if prepared by reactive sputtering, the TiN surface is characterized by {100} facets for which the GaN incubation time is extremely long. Fast GaN nucleation is only obtained after deposition of a sub-monolayer of SiN
atoms prior to the GaN growth. By varying the amount of pre-deposited SiN
, the GaN nanowire density could be tuned by three orders of magnitude with excellent uniformity over the entire wafer, bridging the density regimes conventionally attainable by direct self-assembly with MBE or MOVPE. The analysis of the nanowire morphology agrees with a nucleation of the GaN nanowires on nanometric SiN
patches. The photoluminescence analysis of single freestanding GaN nanowires reveals a band edge luminescence dominated by excitonic transitions that are broad and blue shifted compared to bulk GaN, an effect that is related to the small nanowire diameter and to the presence of a thick native oxide. The approach developed here can be principally used for tuning the density of most III-V semiconductors nucleus grown on inert surfaces like 2D materials.</description><identifier>ISSN: 0957-4484</identifier><identifier>EISSN: 1361-6528</identifier><identifier>DOI: 10.1088/1361-6528/acdde8</identifier><identifier>PMID: 37311438</identifier><identifier>CODEN: NNOTER</identifier><language>eng</language><publisher>England: IOP Publishing</publisher><subject>III-nitrides ; incubation time ; molecular beam epitaxy ; nanowire ; nucleation site ; self-assembly ; transition metal nitrides</subject><ispartof>Nanotechnology, 2023-09, Vol.34 (37), p.375602</ispartof><rights>2023 The Author(s). Published by IOP Publishing Ltd</rights><rights>Creative Commons Attribution license.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c309t-1af572691e0d57c90f43bc8ac0704a71b98cdebf8f197f2a9ca1e9629b99d14e3</citedby><cites>FETCH-LOGICAL-c309t-1af572691e0d57c90f43bc8ac0704a71b98cdebf8f197f2a9ca1e9629b99d14e3</cites><orcidid>0000-0003-4197-6811 ; 0000-0001-5455-2001 ; 0000-0002-2729-7970 ; 0000-0002-9503-5729</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/37311438$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Auzelle, T</creatorcontrib><creatorcontrib>Oliva, M</creatorcontrib><creatorcontrib>John, P</creatorcontrib><creatorcontrib>Ramsteiner, M</creatorcontrib><creatorcontrib>Trampert, A</creatorcontrib><creatorcontrib>Geelhaar, L</creatorcontrib><creatorcontrib>Brandt, O</creatorcontrib><title>Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)</title><title>Nanotechnology</title><addtitle>NANO</addtitle><addtitle>Nanotechnology</addtitle><description>The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh (>10
m
) or ultralow (<1
m
) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we examine the self-assembly of SiN
patches on TiN(111) substrates which are eventually acting as seeds for the growth of GaN nanowires. We first found that if prepared by reactive sputtering, the TiN surface is characterized by {100} facets for which the GaN incubation time is extremely long. Fast GaN nucleation is only obtained after deposition of a sub-monolayer of SiN
atoms prior to the GaN growth. By varying the amount of pre-deposited SiN
, the GaN nanowire density could be tuned by three orders of magnitude with excellent uniformity over the entire wafer, bridging the density regimes conventionally attainable by direct self-assembly with MBE or MOVPE. The analysis of the nanowire morphology agrees with a nucleation of the GaN nanowires on nanometric SiN
patches. The photoluminescence analysis of single freestanding GaN nanowires reveals a band edge luminescence dominated by excitonic transitions that are broad and blue shifted compared to bulk GaN, an effect that is related to the small nanowire diameter and to the presence of a thick native oxide. The approach developed here can be principally used for tuning the density of most III-V semiconductors nucleus grown on inert surfaces like 2D materials.</description><subject>III-nitrides</subject><subject>incubation time</subject><subject>molecular beam epitaxy</subject><subject>nanowire</subject><subject>nucleation site</subject><subject>self-assembly</subject><subject>transition metal nitrides</subject><issn>0957-4484</issn><issn>1361-6528</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp1kN9LwzAQx4Mobk7ffZI8OrAu15_Jo0ydwpgPzueQphfX0bUlaZn7722p7kkhcJD7fO-4DyHXwO6BcT6DIAYvjnw-UzrLkJ-Q8fHrlIyZiBIvDHk4IhfObRkD4D6ck1GQBABhwMekeMTS5c2B6qpsbFXQytCFWtFSldU-t-ioamizQbpXBi11WhVIW5eXn9RhYTzlHO7SAjP6nq_oF61Vozddqiqpq9umQdu11vnqFgCml-TMqMLh1U-dkI_np_X8xVu-LV7nD0tPB0w0HigTJX4sAFkWJVowEwap5kqzhIUqgVRwnWFquAGRGF8JrQBF7ItUiAxCDCaEDXO1rZyzaGRt852yBwlM9uJkb0n2luQgrovcDJG6TXeYHQO_pjpgOgB5Vctt1dqyu0D2mmQQdlj3opj5ss5Mx979wf67-xuNTIZA</recordid><startdate>20230910</startdate><enddate>20230910</enddate><creator>Auzelle, T</creator><creator>Oliva, M</creator><creator>John, P</creator><creator>Ramsteiner, M</creator><creator>Trampert, A</creator><creator>Geelhaar, L</creator><creator>Brandt, O</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-4197-6811</orcidid><orcidid>https://orcid.org/0000-0001-5455-2001</orcidid><orcidid>https://orcid.org/0000-0002-2729-7970</orcidid><orcidid>https://orcid.org/0000-0002-9503-5729</orcidid></search><sort><creationdate>20230910</creationdate><title>Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)</title><author>Auzelle, T ; Oliva, M ; John, P ; Ramsteiner, M ; Trampert, A ; Geelhaar, L ; Brandt, O</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c309t-1af572691e0d57c90f43bc8ac0704a71b98cdebf8f197f2a9ca1e9629b99d14e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>III-nitrides</topic><topic>incubation time</topic><topic>molecular beam epitaxy</topic><topic>nanowire</topic><topic>nucleation site</topic><topic>self-assembly</topic><topic>transition metal nitrides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Auzelle, T</creatorcontrib><creatorcontrib>Oliva, M</creatorcontrib><creatorcontrib>John, P</creatorcontrib><creatorcontrib>Ramsteiner, M</creatorcontrib><creatorcontrib>Trampert, A</creatorcontrib><creatorcontrib>Geelhaar, L</creatorcontrib><creatorcontrib>Brandt, O</creatorcontrib><collection>Open Access: IOP Publishing Free Content</collection><collection>IOPscience (Open Access)</collection><collection>PubMed</collection><collection>CrossRef</collection><jtitle>Nanotechnology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Auzelle, T</au><au>Oliva, M</au><au>John, P</au><au>Ramsteiner, M</au><au>Trampert, A</au><au>Geelhaar, L</au><au>Brandt, O</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111)</atitle><jtitle>Nanotechnology</jtitle><stitle>NANO</stitle><addtitle>Nanotechnology</addtitle><date>2023-09-10</date><risdate>2023</risdate><volume>34</volume><issue>37</issue><spage>375602</spage><pages>375602-</pages><issn>0957-4484</issn><eissn>1361-6528</eissn><coden>NNOTER</coden><abstract>The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh (>10
m
) or ultralow (<1
m
) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we examine the self-assembly of SiN
patches on TiN(111) substrates which are eventually acting as seeds for the growth of GaN nanowires. We first found that if prepared by reactive sputtering, the TiN surface is characterized by {100} facets for which the GaN incubation time is extremely long. Fast GaN nucleation is only obtained after deposition of a sub-monolayer of SiN
atoms prior to the GaN growth. By varying the amount of pre-deposited SiN
, the GaN nanowire density could be tuned by three orders of magnitude with excellent uniformity over the entire wafer, bridging the density regimes conventionally attainable by direct self-assembly with MBE or MOVPE. The analysis of the nanowire morphology agrees with a nucleation of the GaN nanowires on nanometric SiN
patches. The photoluminescence analysis of single freestanding GaN nanowires reveals a band edge luminescence dominated by excitonic transitions that are broad and blue shifted compared to bulk GaN, an effect that is related to the small nanowire diameter and to the presence of a thick native oxide. The approach developed here can be principally used for tuning the density of most III-V semiconductors nucleus grown on inert surfaces like 2D materials.</abstract><cop>England</cop><pub>IOP Publishing</pub><pmid>37311438</pmid><doi>10.1088/1361-6528/acdde8</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0003-4197-6811</orcidid><orcidid>https://orcid.org/0000-0001-5455-2001</orcidid><orcidid>https://orcid.org/0000-0002-2729-7970</orcidid><orcidid>https://orcid.org/0000-0002-9503-5729</orcidid><oa>free_for_read</oa></addata></record> |
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| source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
| subjects | III-nitrides incubation time molecular beam epitaxy nanowire nucleation site self-assembly transition metal nitrides |
| title | Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111) |
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