Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array

We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs buffer/GaSb epilayer interface to reduce the dislocation density of the SL s...

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Bibliographic Details
Published in:Semiconductor science and technology 2018-03, Vol.33 (3), p.35002
Main Authors: Korkmaz, Melih, Arikan, Bulent, Suyolcu, Y Eren, Aslan, Bulent, Serincan, U ur
Format: Article
Language:English
Subjects:
InAs/GaSb superlattice
interfacial misfit (IMF) array
lattice mismatch
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Summary:We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs buffer/GaSb epilayer interface to reduce the dislocation density of the SL structure grown on the lattice mismatched GaAs substrate. Optical and electrical performance of this sample (SL-GaAs) were then compared with the reference sample of the same structure grown on a GaSb substrate (SL-GaSb). At 80 K, the dark current density and the detectivity values of the pin photodetectors were recorded as 5.40 × 10−3 A cm−2 and 2.34 × 1010 cm Hz0.5 W−1 for the SL-GaAs and 9.50 × 10−4 A cm−2 and 4.70 × 1010 cm Hz0.5 W−1 for the SL-GaSb, respectively.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/aaa7a0