Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 2: application to experimental IV measurements and comparison with other methods

In this Part 2 of this series of articles, the procedure proposed in Part 1, namely a new parameter extraction technique of the shunt resistance (Rsh) and saturation current (Isat) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is applied to CdS-CdTe and CIGS-CdS...

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Bibliographic Details
Published in:Semiconductor science and technology 2018-04, Vol.33 (4), p.45008
Main Authors: Rangel-Kuoppa, Victor-Tapio, Albor-Aguilera, María-de-Lourdes, Hérnandez-Vásquez, César, Flores-Márquez, José-Manuel, Jiménez-Olarte, Daniel, Sastré-Hernández, Jorge, González-Trujillo, Miguel-Ángel, Contreras-Puente, Gerardo-Silverio
Format: Article
Language:English
Subjects:
CdS
CdTe
CIGS
parameter extraction
saturation current
shunt resistance
Solar cell
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Summary:In this Part 2 of this series of articles, the procedure proposed in Part 1, namely a new parameter extraction technique of the shunt resistance (Rsh) and saturation current (Isat) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is applied to CdS-CdTe and CIGS-CdS solar cells. First, the Cheung method is used to obtain the series resistance (Rs) and the ideality factor n. Afterwards, procedures A and B proposed in Part 1 are used to obtain Rsh and Isat. The procedure is compared with two other commonly used procedures. Better accuracy on the simulated I-V curves used with the parameters extracted by our method is obtained. Also, the integral percentage errors from the simulated I-V curves using the method proposed in this study are one order of magnitude smaller compared with the integral percentage errors using the other two methods.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/aab018