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Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al 2 O 3 (0001) substrate
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Published in: | Semiconductor science and technology 2018-09, Vol.33 (9), p.95011 |
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container_issue | 9 |
container_start_page | 95011 |
container_title | Semiconductor science and technology |
container_volume | 33 |
creator | Brudnyi, V N Boiko, V M Kolin, N G Kosobutsky, A V Korulin, A V Brudnyi, P A Ermakov, V S |
description | |
doi_str_mv | 10.1088/1361-6641/aad53b |
format | article |
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ispartof | Semiconductor science and technology, 2018-09, Vol.33 (9), p.95011 |
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source | Institute of Physics |
title | Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al 2 O 3 (0001) substrate |
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