Dependence of leakage current in Ni/Si 3 N 4 /n-GaN Schottky diodes on deposition conditions of silicon nitride

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Bibliographic Details
Published in:Semiconductor science and technology 2018-11, Vol.33 (11), p.115008
Main Authors: Zakheim, Dmitry A, Lundin, Wsevolod V, Sakharov, Alexey V, Zavarin, Eugene E, Brunkov, Pavel N, Lundina, Elena Y, Tsatsulnikov, Andrey F, Karpov, Sergey Yu
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/aae242