Effects of selective area intermixing on InAlGaAs multiple quantum well laser diode

In this work, we report on laser diodes with intermixed InAlGaAs multi-quantum well (MQW) as the active gain medium. Using an impurity-free vacancy-enhanced disordering technique, several silicon nitride-capped InAlGaAs MQW samples are intermixed to different levels by varying the rapid-annealing te...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor science and technology 2019-02, Vol.34 (2), p.25010
Main Authors: Alahmadi, Yousef, LiKamWa, Patrick
Format: Article
Language:English
Subjects:
AlInGaAs MQW
bandgap shift
impurity-free vacancy-enhanced disordering (IFVD)
loss measurement
quantum-well intermixing (QWI)
QW Disordering
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, we report on laser diodes with intermixed InAlGaAs multi-quantum well (MQW) as the active gain medium. Using an impurity-free vacancy-enhanced disordering technique, several silicon nitride-capped InAlGaAs MQW samples are intermixed to different levels by varying the rapid-annealing temperatures from 730 °C to 830 °C. The intermixed laser diodes operate at wavelengths spanning from 1520 nm to 1400 nm, while exhibiting an increase in threshold current from 25 mA (as-grown) to 45 mA, and a decrease in slope efficiency from 0.101 W A−1 (as-grown) to 0.068 W A−1 as the intermixing extent is increased. For a sample that was annealed at 770 °C while only covered with a silicon dioxide film, the lasing wavelength is 1543 nm compared to 1550 nm for the as-grown laser wavelength, and the lasing threshold current is 26 mA with a slope efficiency of 0.08 W A−1.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/aaf439