Design of AlGaN-based lasers with a buried tunnel junction for sub-300 nm emission

This paper discusses the design of electrically-pumped AlGaN-based in-plane lasers emitting at ∼290 nm. Our laser design utilizes strained Al0.5Ga0.5N quantum wells, and a novel polarization engineered AlGaN/InGaN/AlGaN-based tunnel junction. The low ­resistive tunnel junction is used as an intracav...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductor science and technology 2019-07, Vol.34 (7), p.74002
Main Authors: Arafin, Shamsul, Hasan, Syed M N, Jamal-Eddine, Zane, Wickramaratne, Darshana, Paul, Banaful, Rajan, Siddharth
Format: Article
Language:English
Subjects:
AlGaN
metalorganic chemical vapor deposition
molecular beam epitaxy
tunnel junction
UV diode laser
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper discusses the design of electrically-pumped AlGaN-based in-plane lasers emitting at ∼290 nm. Our laser design utilizes strained Al0.5Ga0.5N quantum wells, and a novel polarization engineered AlGaN/InGaN/AlGaN-based tunnel junction. The low ­resistive tunnel junction is used as an intracavity contact in the device in place of the resistive p-type contact; which leads to improved hole injection and a reduced threshold voltage. Hence, room-temperature continuous-wave laser operation could be enabled. Strategies to improve the performance of the tunnel junction contact through the incorporation of low concentrations of boron in the highly-doped AlGaN tunnel junction layers as a means to increase the polarization sheet charge are also discussed.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab19cd