High power broad-area lasers with buried implantation for current confinement

Broad area lasers emitting near 915 nm are fabricated using a 2-step epitaxial growth process, with an intermediate implantation of silicon or oxygen ions. This approach allows for the introduction of buried lateral current confinement layers at moderate cost in terms of process complexity. The effe...

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Bibliographic Details
Published in:Semiconductor science and technology 2019-10, Vol.34 (10), p.105005
Main Authors: Della Casa, P, Martin, D, Maaßdorf, A, Adam, T, Thies, A, Beier, M, Häusler, K, Knigge, A, Weyers, M
Format: Article
Language:English
Subjects:
broad area laser
implantation
MOVPE
semiconductor laser
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Summary:Broad area lasers emitting near 915 nm are fabricated using a 2-step epitaxial growth process, with an intermediate implantation of silicon or oxygen ions. This approach allows for the introduction of buried lateral current confinement layers at moderate cost in terms of process complexity. The effectiveness of this strategy with respect to different implantation conditions is tested, obtaining up to 12% reduction of threshold current and 15% increase of slope efficiency with respect to standard lasers. Also a significant improvement of the beam quality-which is relevant to coupling efficiency-has been obtained in terms of reduction of the lateral beam product parameter, from 3.8 mm × mrad at 5A for standard lasers to 2.2 mm × mrad for implanted and regrown lasers, but at the expense of energy efficiency.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab39b8