Improvement in DC and pulse characteristics of AlGaN/GaN HEMT by employing dual metal gate structure

This paper presents the fabrication and electrical characterization of dual metal gated high electron mobility transistors (DMG-HEMTs) on AlGaN/GaN/SiC hetero-structure using oblique and normal angle deposition of Nickel and Titanium respectively as gate metals. A noteworthy advance in the device ch...

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Bibliographic Details
Published in:Semiconductor science and technology 2019-10, Vol.34 (10), p.105013
Main Authors: Visvkarma, Ajay Kumar, Laishram, Robert, Kapoor, Sonalee, Rawal, D S, Vinayak, Seema, Saxena, Manoj
Format: Article
Language:English
Subjects:
AlGaN/GaN HEMT
current collapse
dual metal gate
oblique angle deposition
schottky barrier height
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Summary:This paper presents the fabrication and electrical characterization of dual metal gated high electron mobility transistors (DMG-HEMTs) on AlGaN/GaN/SiC hetero-structure using oblique and normal angle deposition of Nickel and Titanium respectively as gate metals. A noteworthy advance in the device characteristics has been achieved including DC and pulse drain current, transconductance, ON-resistance. The upsurge in DC drain current and transconductance is ∼8% and 11% respectively. Pulse I-V measurements have been executed to evaluate the dynamic performance of DMG-HEMTs. Pulse I-V unveils significant improvement in drain lag, gate lag and current collapse in these devices which is due to the redistribution of electric field under the gate.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab3ce4