Atomic structures and dynamic properties of dislocations in semiconductors: current progress and stagnation

The current understanding of various dislocation phenomena, including nucleation, core structures, kink properties, impurity effects, and point defect formation and absorption in semiconductors, especially in terms on their dynamics, is comprehensively surveyed along with glide mechanism in wide-gap...

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Bibliographic Details
Published in:Semiconductor science and technology 2020-04, Vol.35 (4), p.43001
Main Author: Yonenaga, Ichiro
Format: Article
Language:English
Subjects:
core structure
dislocations
dynamic properties
impurity effects
nucleation
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Summary:The current understanding of various dislocation phenomena, including nucleation, core structures, kink properties, impurity effects, and point defect formation and absorption in semiconductors, especially in terms on their dynamics, is comprehensively surveyed along with glide mechanism in wide-gap semiconductors. Even now, the experimental clarifications at an atomic scale for some dislocation phenomena are limited as being in Labyrinth in spite of the increasing knowledge addressed from developing computational simulations. In the stagnation, simultaneous in situ and high-resolution imaging studies of dislocation phenomena are expected as an indispensable clue to further elucidate the dislocation phenomena.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab675e