Donor-acceptor nature of orange photoluminescence in AlN

Recombination dynamics, photoluminescence and photoluminescence excitation spectra have been investigated for 1.9 eV photoluminescence band in AlN in the temperature range of 5-650 K. The recombination dynamics for the 1.9 eV photoluminescence band has been described by a model of donor-acceptor rec...

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Bibliographic Details
Published in:Semiconductor science and technology 2020-12, Vol.35 (12), p.125006
Main Authors: Aleksandrov, Ivan A, Malin, Timur V, Milakhin, Denis S, Ber, Boris Ya, Kazantsev, Dmitrii Yu, Zhuravlev, Konstantin S
Format: Article
Language:English
Subjects:
AlN
defects
photoluminescence
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Summary:Recombination dynamics, photoluminescence and photoluminescence excitation spectra have been investigated for 1.9 eV photoluminescence band in AlN in the temperature range of 5-650 K. The recombination dynamics for the 1.9 eV photoluminescence band has been described by a model of donor-acceptor recombination with taking into account a broadening due to electron coupling with local lattice vibrations of a deep level defect. The experimental results have been compared with density functional theory calculations of luminescence peak energies and line shapes of band to defect and donor-acceptor transitions, and possible origin of the orange photoluminescence band in AlN has been discussed.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/abacdd