Radiation hardness studies of thin and low bulk resistivity LGADs

The low gain avalanche detector (LGAD), having a unique feature of built-in charge multiplication, is more efficient in terms of charge collection (CC) than the traditional silicon detector even after irradiation. However, a dramatic decrease in the charge multiplication beyond a fluence of 3 × 10 1...

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Bibliographic Details
Published in:Semiconductor science and technology 2021-06, Vol.36 (6), p.65016
Main Authors: Jain, Geetika, Jain, Chakresh, Saumya, Saumya, Agrawal, Namrata, Bhardwaj, Ashutosh, Ranjan, Kirti
Format: Article
Language:English
Subjects:
LGAD
low bulk resistivity
radiation hardness
silicon detectors
thin detectors
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Summary:The low gain avalanche detector (LGAD), having a unique feature of built-in charge multiplication, is more efficient in terms of charge collection (CC) than the traditional silicon detector even after irradiation. However, a dramatic decrease in the charge multiplication beyond a fluence of 3 × 10 14 n eq ⋅ cm −2 is observed in the measurements. In the reported work, TCAD CC simulations are carried out on various physical and geometrical LGAD design parameters with the aim to understand and extend the radiation hardness capabilities. It is observed that a thin LGAD with low bulk resistivity may survive up to a fluence of 3 × 10 15 n eq ⋅ cm −2 for an optimal choice of p-well design. A detailed investigation including CC and leakage current validation with experimental data and 1D electric field profile, in support of optimizations performed, is also provided.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/abfb0f