Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

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Bibliographic Details
Published in:Semiconductor science and technology 2021-07, Vol.36 (7), p.75008
Main Authors: Mauder, C, Hahn, H, Marx, M, Gao, Z, Oligschlaeger, R, Zweipfennig, T, Noculak, A, Negra, R, Kalisch, H, Vescan, A, Heuken, M
Format: Article
Language:English
Subjects:
coplanar waveguides
diffusion
GaN on Si
HEMT
metalorganic chemical vapor deposition
RF loss
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ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ac02da