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Influence of fabrication parameters on the magnetic and structural properties of Mn 5 Ge 3
Mn 5 Ge 3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn 5 Ge 3 layers grown on Ge substr...
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Published in: | Semiconductor science and technology 2022-06, Vol.37 (6), p.65009 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | Mn
5
Ge
3
is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn
5
Ge
3
layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) method. We investigate the influence of the substrate orientation, Mn layer thickness and annealing parameters on the crystallographic orientation and magnetization of Mn
5
Ge
3
. It is shown that after millisecond range SPE, Mn
5
Ge
3
films always have a preferred (100) orientation whether grown on Ge (001) or (111) substrates, which determines the orientation of the magnetization easy axis lying in the film plane along
c
axis independent of the layer thickness. The Curie temperature of Mn
5
Ge
3
weakly depends on fabrication parameters. |
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ISSN: | 0268-1242 1361-6641 |
DOI: | 10.1088/1361-6641/ac6689 |