The impacts of SiO 2 atomic-layer-deposited passivation layer thickness on GaN-based green micro-LEDs

In this study, we fabricated 76 × 127 µ m 2 green GaN-based micro-light-emitting-diodes (micro-LEDs) with atomic-layer-deposited (ALD) SiO 2 passivation layers whose thicknesses were 0, 15, and 100 nm. The optoelectrical and communication performances of these devices were measured and analysed. The...

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Bibliographic Details
Published in:Semiconductor science and technology 2024-04, Vol.39 (4), p.45004
Main Authors: Deng, Youcai, Chen, Jinlan, Li, Saijun, Huang, He, Liu, Zhong, Yan, Zijun, Lai, Shouqiang, Zheng, Lijie, Yang, Tianzhi, Chen, Zhong, Wu, Tingzhu
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Language:English
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Summary:In this study, we fabricated 76 × 127 µ m 2 green GaN-based micro-light-emitting-diodes (micro-LEDs) with atomic-layer-deposited (ALD) SiO 2 passivation layers whose thicknesses were 0, 15, and 100 nm. The optoelectrical and communication performances of these devices were measured and analysed. The current-voltage results showed that ALD technology reduced the leakage current and enhanced the forward current of micro-LEDs. Compared with those of micro-LEDs without the passivation layer, the external quantum efficiency of micro-LEDs with 15 and 100 nm-thick SiO 2 passivation layers increased by 23.64% and 19.47%, respectively. Furthermore, analysis of the EQE of the samples at room temperature using the ABC + f (n) model revealed the differences in the physical mechanisms of green micro-LEDs. Moreover, the communication performance indicated that ALD sidewall passivation reduced the carrier lifetime and improved the communication performance of green micro-LEDs.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ad2b0a