Lateral Mn 5 Ge 3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas

• Published in: Semiconductor science and technology 2024-12, Vol.39 (12), p.125004
• Main Authors: Weißhaupt, David, Sürgers, Christoph, Bloos, Dominik, Funk, Hannes Simon, Oehme, Michael, Fischer, Gerda, Schubert, Markus Andreas, Wenger, Christian, van Slageren, Joris, Fischer, Inga Anita, Schulze, Jörg
• Format: Article
• Language: English
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/1361-6641/ad8d06

Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn 5 Ge 3 /Ge 2DHG/ Mn 5 Ge 3 device. The ferromagnetic Mn 5 Ge 3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.