Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing

The simultaneous control of the number and position of negatively charged nitrogen-vacancy (NV) centers in diamond was achieved. While single near-surface NV centers are known to exhibit outstanding capabilities in external spin sensing, trade-off relationships among the accuracy of the number and p...

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Bibliographic Details
Published in:New journal of physics 2018-08, Vol.20 (8), p.83029
Main Authors: Fukuda, Ryosuke, Balasubramanian, Priyadharshini, Higashimata, Itaru, Koike, Godai, Okada, Takuma, Kagami, Risa, Teraji, Tokuyuki, Onoda, Shinobu, Haruyama, Moriyoshi, Yamada, Keisuke, Inaba, Masafumi, Yamano, Hayate, Stürner, Felix M, Schmitt, Simon, McGuinness, Liam P, Jelezko, Fedor, Ohshima, Takeshi, Shinada, Takahiro, Kawarada, Hiroshi, Kada, Wataru, Hanaizumi, Osamu, Tanii, Takashi, Isoya, Junichi
Format: Article
Language:English
Subjects:
Detection
diamond
Diamonds
Ion implantation
Lattice sites
Lattice vacancies
Nitrogen
Nitrogen ions
nitrogen-vacancy center
NMR
noise analysis
Nuclear spin
Physics
Position sensing
quantum sensing
regular array
Spatial resolution
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Summary:The simultaneous control of the number and position of negatively charged nitrogen-vacancy (NV) centers in diamond was achieved. While single near-surface NV centers are known to exhibit outstanding capabilities in external spin sensing, trade-off relationships among the accuracy of the number and position, and the coherence of NV centers have made the use of such engineered NV centers difficult. Namely, low-energy nitrogen implantation with lithographic techniques enables the nanoscale position control but results in degradation of the creation yield and the coherence property. In this paper, we show that low-energy nitrogen ion implantation to a 12C (99.95%)-enriched homoepitaxial diamond layer using nanomask is applicable to create shallow NV centers with a sufficiently long coherence time for external spin sensing, at a high creation yield. Furthermore, the NV centers were arranged in a regular array so that 40% lattice sites contain single NV centers. The XY8-k measurements using the individual NV centers reveal that the created NV centers have depths from 2 to 12 nm, which is comparable to the stopping range of nitrogen ions implanted at 2.5 keV. We show that the position-controlled NV centers are capable of external spin sensing with a ultra-high spatial resolution.
ISSN:1367-2630
1367-2630
DOI:10.1088/1367-2630/aad997