Electron states in a semiconductor quantum well wire in presence of an external transversal electric field

In this work, the electron states corresponding to a semiconductor quantum well wire grown on a GaAs/AlGaAs matrix with a cylindrical symmetry, in the presence of an external electric field which is homogenous and perpendicular to the axis of the system, is obtained. This study takes into considerat...

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Bibliographic Details
Published in:Physica scripta 2018-09, Vol.93 (9), p.95804
Main Authors: Fernández-Lozada, M, Betancourt-Riera, Ri, Betancourt-Riera, Re, Nieto Jalil, J M
Format: Article
Language:English
Subjects:
electron states
nanowire
quantum well wires
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Summary:In this work, the electron states corresponding to a semiconductor quantum well wire grown on a GaAs/AlGaAs matrix with a cylindrical symmetry, in the presence of an external electric field which is homogenous and perpendicular to the axis of the system, is obtained. This study takes into consideration the partial and total confinement of the charge carriers, and assumes T = 0 K. The model on which this is based considers a system of parabolic bands, which unfolds in a system of sub-bands due to confinement. In addition, the selection rules for intraband and interband optic transitions are studied.
ISSN:0031-8949
1402-4896
DOI:10.1088/1402-4896/aad4d8