Temperature dependence of electrical characteristics and interface state densities of Au/n-type Si structures with SnS doped PVC interface

• Published in: Physica scripta 2022-09, Vol.97 (9), p.95816
• Main Authors: Karataş, Şükrü, Altındal, Şemsettin, Ulusoy, Murat, Azizian-Kalandaragh, Y, Özçelik, Süleyman
• Format: Article
• Language: English
• Subjects: Au/SnS-doped PVC; electrical properties; gaussian distribution; temperature dependence
• ISSN: 0031-8949; 1402-4896
• DOI: 10.1088/1402-4896/ac89bb

In this study, the electrical properties of Au/(SnS doped PVC)/ n –Si structures were investigated in detail using current/voltage ( IV ) data in wide temperature range (80–340 K by 20 K steps). Some of the basic electrical parameters such as ideality factor ( n ), saturation current ( I 0 ), and barrier height (Φ bo ) were obtained. When these parameters were extracted using thermionic emission (TE) theory, it was found that the value of n decreases whereas Φ bo increases with increasing temperature. This result can be explained by the barrier height (BH) inhomogeneity. The observed two linear regions in the plots of Φ bo – n , Φ bo –(1/2 kT ) 1 and ( n −1 –1)–(1/2 kT ) in temperature regions of 80–160 K and 80–340 K form an evidence to the presence of Double Gaussian distribution (DGD). Using the plot of Φ bo –(1/2 kT ), the values of mean BH ( Φ ¯ b o ) and standard deviation ( σ S ) were found as 0.486 eV and 66 mV for first region, and 0.984 eV and 139 mV for second region, respectively. Thus, the effective Richardson constant (A*) was obtained using the interception point of the modified Richardson plot for these regions as 7.013 × 10 −6 A.K −2 cm −2 and 88.12 A.K −2 cm −2 , respectively. It is clear that A* value for second region is closer to theoretical value (=112 A.K −2 cm −2 for n –Si). Finally, the energy dependent profile of the surface-states (N ss ) was extracted using Card-Rhoderick method and N ss was found to range from ∼10 12 (at 80 K) to 10 13 eV −1 cm −2 (at 340 K).