Loading…

Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets

Due to the fascinating properties of the BAs monolayer and its promising applications, we study the structural, electronic, magnetic, and optical properties of the 3 d transition metal mono-doped BAs nanosheets using first-principle calculations. Two substitutional doping configurations are consider...

Full description

Saved in:
Bibliographic Details
Published in:Physica scripta 2024-02, Vol.99 (2), p.25904
Main Authors: Helal, M A, Fadlallah, Mohamed M
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623
cites cdi_FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623
container_end_page
container_issue 2
container_start_page 25904
container_title Physica scripta
container_volume 99
creator Helal, M A
Fadlallah, Mohamed M
description Due to the fascinating properties of the BAs monolayer and its promising applications, we study the structural, electronic, magnetic, and optical properties of the 3 d transition metal mono-doped BAs nanosheets using first-principle calculations. Two substitutional doping configurations are considered at sites B (dopant B ) and As (dopant As ). The doped structure at site As is more stable than at site B for the same dopant because the difference in atomic size between the dopant and As atoms is smaller than the corresponding dopant and B atoms. We explain the magnetic moments of the doped monolayer in terms of the number of valence electrons, the oxidation number, and the coupling between the electrons in the outer shell of the dopant. The Mn B , Cu, and Zn B dopings convert the semiconducting behavior of the pristine BAs monolayer into metallic behavior. The BAs monolayer becomes a dilute magnetic semiconductor under the influence of V B , Cr, Fe B , Co B , and Ni dopings. Due to their half-metallic behavior, the Ti-, Mn-, Fe-, and Zn-doped BAs at the site As can be used in spintronic applications. The Ti As and Mn As doped BAs nanosheets can enhance light absorption in the infrared and small range of the visible light regions as compared to pristine and the other doped nanosheets. The results indicate that doped BAs monolayers can be used in various optoelectronic and spintronic applications.
doi_str_mv 10.1088/1402-4896/ad16fe
format article
fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1088_1402_4896_ad16fe</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>psad16fe</sourcerecordid><originalsourceid>FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623</originalsourceid><addsrcrecordid>eNp9kEtPAyEQx4nRxPq4e-TkqWuBZVk4msZX0sSDeiYsDEptYQP04Ld3mxpPxtNM5v_I5IfQFSU3lEi5oJywhkslFsZR4eEIzX5Px2hGSEsbqbg6RWelrAlhggk1Q58vNe9s3WWzmWPYgK05xWDneGveI9RgsYkOp3HazAaPOY2Qa4CCk8c1m1hCDSniLdRJdpPq8JCmCmxygRgc4GhiKh8AtVygE282BS5_5jl6u797XT42q-eHp-XtqrGM09p4I1vuJAcuejr0RoiWtAMzsheCu94rJ1QvBQPZWUqclNRbx4EMXTeoVrD2HJFDr82plAxejzlsTf7SlOg9LL0no_dk9AHWFJkfIiGNep12OU4P_me__sM-Fq2UZpqwThGuR-fbb7lienw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Helal, M A ; Fadlallah, Mohamed M</creator><creatorcontrib>Helal, M A ; Fadlallah, Mohamed M</creatorcontrib><description>Due to the fascinating properties of the BAs monolayer and its promising applications, we study the structural, electronic, magnetic, and optical properties of the 3 d transition metal mono-doped BAs nanosheets using first-principle calculations. Two substitutional doping configurations are considered at sites B (dopant B ) and As (dopant As ). The doped structure at site As is more stable than at site B for the same dopant because the difference in atomic size between the dopant and As atoms is smaller than the corresponding dopant and B atoms. We explain the magnetic moments of the doped monolayer in terms of the number of valence electrons, the oxidation number, and the coupling between the electrons in the outer shell of the dopant. The Mn B , Cu, and Zn B dopings convert the semiconducting behavior of the pristine BAs monolayer into metallic behavior. The BAs monolayer becomes a dilute magnetic semiconductor under the influence of V B , Cr, Fe B , Co B , and Ni dopings. Due to their half-metallic behavior, the Ti-, Mn-, Fe-, and Zn-doped BAs at the site As can be used in spintronic applications. The Ti As and Mn As doped BAs nanosheets can enhance light absorption in the infrared and small range of the visible light regions as compared to pristine and the other doped nanosheets. The results indicate that doped BAs monolayers can be used in various optoelectronic and spintronic applications.</description><identifier>ISSN: 0031-8949</identifier><identifier>EISSN: 1402-4896</identifier><identifier>DOI: 10.1088/1402-4896/ad16fe</identifier><identifier>CODEN: PHSTBO</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>electronic ; magnetic ; optical ; properties ; structural ; transition</subject><ispartof>Physica scripta, 2024-02, Vol.99 (2), p.25904</ispartof><rights>2024 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623</citedby><cites>FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623</cites><orcidid>0000-0003-2102-1022</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Helal, M A</creatorcontrib><creatorcontrib>Fadlallah, Mohamed M</creatorcontrib><title>Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets</title><title>Physica scripta</title><addtitle>PS</addtitle><addtitle>Phys. Scr</addtitle><description>Due to the fascinating properties of the BAs monolayer and its promising applications, we study the structural, electronic, magnetic, and optical properties of the 3 d transition metal mono-doped BAs nanosheets using first-principle calculations. Two substitutional doping configurations are considered at sites B (dopant B ) and As (dopant As ). The doped structure at site As is more stable than at site B for the same dopant because the difference in atomic size between the dopant and As atoms is smaller than the corresponding dopant and B atoms. We explain the magnetic moments of the doped monolayer in terms of the number of valence electrons, the oxidation number, and the coupling between the electrons in the outer shell of the dopant. The Mn B , Cu, and Zn B dopings convert the semiconducting behavior of the pristine BAs monolayer into metallic behavior. The BAs monolayer becomes a dilute magnetic semiconductor under the influence of V B , Cr, Fe B , Co B , and Ni dopings. Due to their half-metallic behavior, the Ti-, Mn-, Fe-, and Zn-doped BAs at the site As can be used in spintronic applications. The Ti As and Mn As doped BAs nanosheets can enhance light absorption in the infrared and small range of the visible light regions as compared to pristine and the other doped nanosheets. The results indicate that doped BAs monolayers can be used in various optoelectronic and spintronic applications.</description><subject>electronic</subject><subject>magnetic</subject><subject>optical</subject><subject>properties</subject><subject>structural</subject><subject>transition</subject><issn>0031-8949</issn><issn>1402-4896</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kEtPAyEQx4nRxPq4e-TkqWuBZVk4msZX0sSDeiYsDEptYQP04Ld3mxpPxtNM5v_I5IfQFSU3lEi5oJywhkslFsZR4eEIzX5Px2hGSEsbqbg6RWelrAlhggk1Q58vNe9s3WWzmWPYgK05xWDneGveI9RgsYkOp3HazAaPOY2Qa4CCk8c1m1hCDSniLdRJdpPq8JCmCmxygRgc4GhiKh8AtVygE282BS5_5jl6u797XT42q-eHp-XtqrGM09p4I1vuJAcuejr0RoiWtAMzsheCu94rJ1QvBQPZWUqclNRbx4EMXTeoVrD2HJFDr82plAxejzlsTf7SlOg9LL0no_dk9AHWFJkfIiGNep12OU4P_me__sM-Fq2UZpqwThGuR-fbb7lienw</recordid><startdate>20240201</startdate><enddate>20240201</enddate><creator>Helal, M A</creator><creator>Fadlallah, Mohamed M</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-2102-1022</orcidid></search><sort><creationdate>20240201</creationdate><title>Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets</title><author>Helal, M A ; Fadlallah, Mohamed M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>electronic</topic><topic>magnetic</topic><topic>optical</topic><topic>properties</topic><topic>structural</topic><topic>transition</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Helal, M A</creatorcontrib><creatorcontrib>Fadlallah, Mohamed M</creatorcontrib><collection>CrossRef</collection><jtitle>Physica scripta</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Helal, M A</au><au>Fadlallah, Mohamed M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets</atitle><jtitle>Physica scripta</jtitle><stitle>PS</stitle><addtitle>Phys. Scr</addtitle><date>2024-02-01</date><risdate>2024</risdate><volume>99</volume><issue>2</issue><spage>25904</spage><pages>25904-</pages><issn>0031-8949</issn><eissn>1402-4896</eissn><coden>PHSTBO</coden><abstract>Due to the fascinating properties of the BAs monolayer and its promising applications, we study the structural, electronic, magnetic, and optical properties of the 3 d transition metal mono-doped BAs nanosheets using first-principle calculations. Two substitutional doping configurations are considered at sites B (dopant B ) and As (dopant As ). The doped structure at site As is more stable than at site B for the same dopant because the difference in atomic size between the dopant and As atoms is smaller than the corresponding dopant and B atoms. We explain the magnetic moments of the doped monolayer in terms of the number of valence electrons, the oxidation number, and the coupling between the electrons in the outer shell of the dopant. The Mn B , Cu, and Zn B dopings convert the semiconducting behavior of the pristine BAs monolayer into metallic behavior. The BAs monolayer becomes a dilute magnetic semiconductor under the influence of V B , Cr, Fe B , Co B , and Ni dopings. Due to their half-metallic behavior, the Ti-, Mn-, Fe-, and Zn-doped BAs at the site As can be used in spintronic applications. The Ti As and Mn As doped BAs nanosheets can enhance light absorption in the infrared and small range of the visible light regions as compared to pristine and the other doped nanosheets. The results indicate that doped BAs monolayers can be used in various optoelectronic and spintronic applications.</abstract><pub>IOP Publishing</pub><doi>10.1088/1402-4896/ad16fe</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-2102-1022</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0031-8949
ispartof Physica scripta, 2024-02, Vol.99 (2), p.25904
issn 0031-8949
1402-4896
language eng
recordid cdi_crossref_primary_10_1088_1402_4896_ad16fe
source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects electronic
magnetic
optical
properties
structural
transition
title Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T10%3A29%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural,%20electronic,%20magnetic%20and%20optical%20properties%20of%20transition%20metal%20doped%20boron%20arsenide%20nanosheets&rft.jtitle=Physica%20scripta&rft.au=Helal,%20M%20A&rft.date=2024-02-01&rft.volume=99&rft.issue=2&rft.spage=25904&rft.pages=25904-&rft.issn=0031-8949&rft.eissn=1402-4896&rft.coden=PHSTBO&rft_id=info:doi/10.1088/1402-4896/ad16fe&rft_dat=%3Ciop_cross%3Epsad16fe%3C/iop_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true