Loading…
Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets
Due to the fascinating properties of the BAs monolayer and its promising applications, we study the structural, electronic, magnetic, and optical properties of the 3 d transition metal mono-doped BAs nanosheets using first-principle calculations. Two substitutional doping configurations are consider...
Saved in:
Published in: | Physica scripta 2024-02, Vol.99 (2), p.25904 |
---|---|
Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623 |
---|---|
cites | cdi_FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623 |
container_end_page | |
container_issue | 2 |
container_start_page | 25904 |
container_title | Physica scripta |
container_volume | 99 |
creator | Helal, M A Fadlallah, Mohamed M |
description | Due to the fascinating properties of the BAs monolayer and its promising applications, we study the structural, electronic, magnetic, and optical properties of the 3
d
transition metal mono-doped BAs nanosheets using first-principle calculations. Two substitutional doping configurations are considered at sites B (dopant
B
) and As (dopant
As
). The doped structure at site As is more stable than at site B for the same dopant because the difference in atomic size between the dopant and As atoms is smaller than the corresponding dopant and B atoms. We explain the magnetic moments of the doped monolayer in terms of the number of valence electrons, the oxidation number, and the coupling between the electrons in the outer shell of the dopant. The Mn
B
, Cu, and Zn
B
dopings convert the semiconducting behavior of the pristine BAs monolayer into metallic behavior. The BAs monolayer becomes a dilute magnetic semiconductor under the influence of V
B
, Cr, Fe
B
, Co
B
, and Ni dopings. Due to their half-metallic behavior, the Ti-, Mn-, Fe-, and Zn-doped BAs at the site As can be used in spintronic applications. The Ti
As
and Mn
As
doped BAs nanosheets can enhance light absorption in the infrared and small range of the visible light regions as compared to pristine and the other doped nanosheets. The results indicate that doped BAs monolayers can be used in various optoelectronic and spintronic applications. |
doi_str_mv | 10.1088/1402-4896/ad16fe |
format | article |
fullrecord | <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1088_1402_4896_ad16fe</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>psad16fe</sourcerecordid><originalsourceid>FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623</originalsourceid><addsrcrecordid>eNp9kEtPAyEQx4nRxPq4e-TkqWuBZVk4msZX0sSDeiYsDEptYQP04Ld3mxpPxtNM5v_I5IfQFSU3lEi5oJywhkslFsZR4eEIzX5Px2hGSEsbqbg6RWelrAlhggk1Q58vNe9s3WWzmWPYgK05xWDneGveI9RgsYkOp3HazAaPOY2Qa4CCk8c1m1hCDSniLdRJdpPq8JCmCmxygRgc4GhiKh8AtVygE282BS5_5jl6u797XT42q-eHp-XtqrGM09p4I1vuJAcuejr0RoiWtAMzsheCu94rJ1QvBQPZWUqclNRbx4EMXTeoVrD2HJFDr82plAxejzlsTf7SlOg9LL0no_dk9AHWFJkfIiGNep12OU4P_me__sM-Fq2UZpqwThGuR-fbb7lienw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Helal, M A ; Fadlallah, Mohamed M</creator><creatorcontrib>Helal, M A ; Fadlallah, Mohamed M</creatorcontrib><description>Due to the fascinating properties of the BAs monolayer and its promising applications, we study the structural, electronic, magnetic, and optical properties of the 3
d
transition metal mono-doped BAs nanosheets using first-principle calculations. Two substitutional doping configurations are considered at sites B (dopant
B
) and As (dopant
As
). The doped structure at site As is more stable than at site B for the same dopant because the difference in atomic size between the dopant and As atoms is smaller than the corresponding dopant and B atoms. We explain the magnetic moments of the doped monolayer in terms of the number of valence electrons, the oxidation number, and the coupling between the electrons in the outer shell of the dopant. The Mn
B
, Cu, and Zn
B
dopings convert the semiconducting behavior of the pristine BAs monolayer into metallic behavior. The BAs monolayer becomes a dilute magnetic semiconductor under the influence of V
B
, Cr, Fe
B
, Co
B
, and Ni dopings. Due to their half-metallic behavior, the Ti-, Mn-, Fe-, and Zn-doped BAs at the site As can be used in spintronic applications. The Ti
As
and Mn
As
doped BAs nanosheets can enhance light absorption in the infrared and small range of the visible light regions as compared to pristine and the other doped nanosheets. The results indicate that doped BAs monolayers can be used in various optoelectronic and spintronic applications.</description><identifier>ISSN: 0031-8949</identifier><identifier>EISSN: 1402-4896</identifier><identifier>DOI: 10.1088/1402-4896/ad16fe</identifier><identifier>CODEN: PHSTBO</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>electronic ; magnetic ; optical ; properties ; structural ; transition</subject><ispartof>Physica scripta, 2024-02, Vol.99 (2), p.25904</ispartof><rights>2024 IOP Publishing Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623</citedby><cites>FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623</cites><orcidid>0000-0003-2102-1022</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Helal, M A</creatorcontrib><creatorcontrib>Fadlallah, Mohamed M</creatorcontrib><title>Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets</title><title>Physica scripta</title><addtitle>PS</addtitle><addtitle>Phys. Scr</addtitle><description>Due to the fascinating properties of the BAs monolayer and its promising applications, we study the structural, electronic, magnetic, and optical properties of the 3
d
transition metal mono-doped BAs nanosheets using first-principle calculations. Two substitutional doping configurations are considered at sites B (dopant
B
) and As (dopant
As
). The doped structure at site As is more stable than at site B for the same dopant because the difference in atomic size between the dopant and As atoms is smaller than the corresponding dopant and B atoms. We explain the magnetic moments of the doped monolayer in terms of the number of valence electrons, the oxidation number, and the coupling between the electrons in the outer shell of the dopant. The Mn
B
, Cu, and Zn
B
dopings convert the semiconducting behavior of the pristine BAs monolayer into metallic behavior. The BAs monolayer becomes a dilute magnetic semiconductor under the influence of V
B
, Cr, Fe
B
, Co
B
, and Ni dopings. Due to their half-metallic behavior, the Ti-, Mn-, Fe-, and Zn-doped BAs at the site As can be used in spintronic applications. The Ti
As
and Mn
As
doped BAs nanosheets can enhance light absorption in the infrared and small range of the visible light regions as compared to pristine and the other doped nanosheets. The results indicate that doped BAs monolayers can be used in various optoelectronic and spintronic applications.</description><subject>electronic</subject><subject>magnetic</subject><subject>optical</subject><subject>properties</subject><subject>structural</subject><subject>transition</subject><issn>0031-8949</issn><issn>1402-4896</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp9kEtPAyEQx4nRxPq4e-TkqWuBZVk4msZX0sSDeiYsDEptYQP04Ld3mxpPxtNM5v_I5IfQFSU3lEi5oJywhkslFsZR4eEIzX5Px2hGSEsbqbg6RWelrAlhggk1Q58vNe9s3WWzmWPYgK05xWDneGveI9RgsYkOp3HazAaPOY2Qa4CCk8c1m1hCDSniLdRJdpPq8JCmCmxygRgc4GhiKh8AtVygE282BS5_5jl6u797XT42q-eHp-XtqrGM09p4I1vuJAcuejr0RoiWtAMzsheCu94rJ1QvBQPZWUqclNRbx4EMXTeoVrD2HJFDr82plAxejzlsTf7SlOg9LL0no_dk9AHWFJkfIiGNep12OU4P_me__sM-Fq2UZpqwThGuR-fbb7lienw</recordid><startdate>20240201</startdate><enddate>20240201</enddate><creator>Helal, M A</creator><creator>Fadlallah, Mohamed M</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-2102-1022</orcidid></search><sort><creationdate>20240201</creationdate><title>Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets</title><author>Helal, M A ; Fadlallah, Mohamed M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>electronic</topic><topic>magnetic</topic><topic>optical</topic><topic>properties</topic><topic>structural</topic><topic>transition</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Helal, M A</creatorcontrib><creatorcontrib>Fadlallah, Mohamed M</creatorcontrib><collection>CrossRef</collection><jtitle>Physica scripta</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Helal, M A</au><au>Fadlallah, Mohamed M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets</atitle><jtitle>Physica scripta</jtitle><stitle>PS</stitle><addtitle>Phys. Scr</addtitle><date>2024-02-01</date><risdate>2024</risdate><volume>99</volume><issue>2</issue><spage>25904</spage><pages>25904-</pages><issn>0031-8949</issn><eissn>1402-4896</eissn><coden>PHSTBO</coden><abstract>Due to the fascinating properties of the BAs monolayer and its promising applications, we study the structural, electronic, magnetic, and optical properties of the 3
d
transition metal mono-doped BAs nanosheets using first-principle calculations. Two substitutional doping configurations are considered at sites B (dopant
B
) and As (dopant
As
). The doped structure at site As is more stable than at site B for the same dopant because the difference in atomic size between the dopant and As atoms is smaller than the corresponding dopant and B atoms. We explain the magnetic moments of the doped monolayer in terms of the number of valence electrons, the oxidation number, and the coupling between the electrons in the outer shell of the dopant. The Mn
B
, Cu, and Zn
B
dopings convert the semiconducting behavior of the pristine BAs monolayer into metallic behavior. The BAs monolayer becomes a dilute magnetic semiconductor under the influence of V
B
, Cr, Fe
B
, Co
B
, and Ni dopings. Due to their half-metallic behavior, the Ti-, Mn-, Fe-, and Zn-doped BAs at the site As can be used in spintronic applications. The Ti
As
and Mn
As
doped BAs nanosheets can enhance light absorption in the infrared and small range of the visible light regions as compared to pristine and the other doped nanosheets. The results indicate that doped BAs monolayers can be used in various optoelectronic and spintronic applications.</abstract><pub>IOP Publishing</pub><doi>10.1088/1402-4896/ad16fe</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-2102-1022</orcidid></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0031-8949 |
ispartof | Physica scripta, 2024-02, Vol.99 (2), p.25904 |
issn | 0031-8949 1402-4896 |
language | eng |
recordid | cdi_crossref_primary_10_1088_1402_4896_ad16fe |
source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
subjects | electronic magnetic optical properties structural transition |
title | Structural, electronic, magnetic and optical properties of transition metal doped boron arsenide nanosheets |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T10%3A29%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Structural,%20electronic,%20magnetic%20and%20optical%20properties%20of%20transition%20metal%20doped%20boron%20arsenide%20nanosheets&rft.jtitle=Physica%20scripta&rft.au=Helal,%20M%20A&rft.date=2024-02-01&rft.volume=99&rft.issue=2&rft.spage=25904&rft.pages=25904-&rft.issn=0031-8949&rft.eissn=1402-4896&rft.coden=PHSTBO&rft_id=info:doi/10.1088/1402-4896/ad16fe&rft_dat=%3Ciop_cross%3Epsad16fe%3C/iop_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c241t-fa834d84e4671b7a66303b2a87664d7f9d697862e85c10d881fcd4e0b55b93623%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |