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Designing high-performance polyaniline @MoS 2 @AC hybrid electrode for electrochemical–based Next-generation battery-supercapacitor hybrid energy storage device and hydrogen evolution reaction
Polyaniline (PANI), a conducting polymer, has attracted the attention of researchers as a potential candidate due to its higher capacitance and outstanding electrochemical reversibility. In this research, we used the hydrothermal approach to synthesize MoS 2 @PANI hybrid electrode material that may...
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Published in: | Physica scripta 2024-03, Vol.99 (3), p.35938 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Polyaniline (PANI), a conducting polymer, has attracted the attention of researchers as a potential candidate due to its higher capacitance and outstanding electrochemical reversibility. In this research, we used the hydrothermal approach to synthesize MoS
2
@PANI hybrid electrode material that may overcome the low cyclic stability of PANI. The composite material MoS
2
/PANI (with M/P-25/75 wt%) demonstrated a specific capacity (Qs) with the amount 1087.5 C g
−1
or 1812.5 F/g, much more advanced than reference samples due to the hybrid structural integrity and enhancement of the specific surface area of MoS
2
and PANI interaction through electrostatic repulsion and hydrogen bonding. The asymmetric device (MoS
2
/PANI-25/75wt%//AC) demonstrated an extraordinary value of a Qs of 361 C g
−1
over pure PANI. This novel supercapattery device showed a supreme high energy density of 65.33 Wh kg
−1
and a power density of 1668.83 W/kg. Further, the hybrid electrode is used for the hydrogen evolution reactions and obtained the value of over potential is 43 mV. A small value of the Tafel slope of 39 mV/dec is observed with high stability. The improved energy storage capabilities of MoS
2
/PANI hybrid electrodes with multiple applications provide a new paragon to design unusual and fast multi-functional devices. |
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ISSN: | 0031-8949 1402-4896 |
DOI: | 10.1088/1402-4896/ad25d6 |